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| 2N7085 MECHANICAL DATA Dimensions in mm(inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 10.41 (0.410) 10.67 (0.420) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 123 12.07 (0.500) 19.05 (0.750) V(BR)DSS ID(A) RDS(on) 0.64 (0.025) Dia. 0.89 (0.035) 100V 20A W 0.075W 2.54 (0.100) BSC 3.05 (0.120) BSC FEATURES * TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APPLICATIONS * SCREENING OPTIONS AVAILBLE TO-257AB Metal Package Pin 1 - Gate Pin 2 - Drain Pin 3 - Source * SIMPLE DRIVE REQUIREMENTS ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDS VGS ID IDM PD TJ , Tstg TL Drain - Source Voltage Gate - Source Voltage Continuous Drain Current (TJ = 150C) Pulsed Drain Current Power Dissipation TC = 25C TC = 100C Operating Junction and Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TC = 25C TC = 100C 100V 20V 20A 12A 80A 60W 20W -55 to 150C 300C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/99 2N7085 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter Test Conditions ID = 250A ID = 250A VGS = 20V TJ = 125C VGS = 10V TJ = 125C IDS = 12A 5.0 20 0.06 0.11 8.0 1400 480 110 35 10 18 13 85 35 75 50 20 25 30 120 80 95 20 80 IF = 20A IF = 20A di/dt = 100A/s VGS = 0 150 0.5 2.5 400 ns nC pF 0.075 0.14 Min. 100 2 Typ. Max. Unit V STATIC ELECTRICAL RATINGS V(BR)DSS Drain-Source Breakdown Voltage VGS = 0 VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr 1 Pulse Gate Threshold Voltage Gate - Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain - Source On-State Resistance 1 VDS = VGS VDS = 0 VDS = 80V VGS = 0 VDS = 10V VGS = 10V ID = 12A VDS = 15V VGS = 0 VDS = 25V f = 1MHz 4 100 25 250 V nA A A W S Forward Transconductance1 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Gate Drain Rise Time2 Time2 Charge2 Charge2 Time2 Charge2 Gate Source VDS = 0.5 x V(BR)DSS50V VGS = 10V VDD = 50V VGEN =10V RL = 2.5W RG = 4.7W ID = 20A ID = 20A Turn-On Delay Turn-Off Delay Fall Time2 SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Diode Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge A V ns C 2 Independent test : Pulse Width < 300ms ,Duty Cycle < 2% of Operating Temperature THERMAL RESISTANCECHARACTERISTICS Parameter RthJC RthJA RthCS Thermal resistance Junction-Case Thermal resistance Junction-ambient Thermal resistance Case to Sink 1.0 Min. Typ. Max. 2.1 80 Unit C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/99 |
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